Browsing by Publisher "Physical Soc Republic China"

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Heat treatment effects on the radiation stability of the Schottky barrier on the base of n-Ge

Aliyev, A; Madatov, R; Askerov, I; Okuducu, S (Physical Soc Republic China, 2003)

An analysis of a method for increasing the radiation stability of semiconductor devices is presented in this study. For this purpose, in n-Ge, thermal defects were preliminarily created, and their interaction with radiation ...